ODAY the trend of scaling down channel length in CMOS technology to facilitate submicrometer high density systems on a single integrated circuit (IC) and emergence of portable devices like Ambulatory Brain Computer Interface
نویسنده
چکیده
The increasing demand of personal health monitoring products with long battery life had forced designers to use of those circuits which consume low power. Operational Transconductance Amplifier (OTA) operating in subthreshold (weak inversion) region introduces a versatile solution for the realization of low power VLSI building blocks. This paper is focused on design of high performance OTA through use of high output impedance low-voltage current mirror circuit and observed responses proved to be much better than that of different complex mirror architectures. The proposed OTA incorporates high linearity and better performance in low-frequency applications. The achieved open loop dc gain and unity gain bandwidth (UGB) is 68.67 dB and 70.56 KHz respectively. The OTA is operated at supply voltage of 0.9 volt and consumes power in range of nanowatts. The architecture of OTA is performed in a standard TSMC 0.18 micrometer technology on BSIM 3v3 model and simulation results were analyzed using ELDO Simulator. Keywords— Bulk-input, Low supply voltage, Linear range, subthreshold OTA, Wilson mirror.
منابع مشابه
High-Accurate Low-Voltage Analog CMOS Current Divider Modify by Neural Network and TLBO Algorithm
A high accurate and low-voltage analog CMOS current divider which operates with a single power supply voltage is designed in 0.18µm CMOS standard technology. The proposed divider uses a differential amplifier and transistor in triode region in order to perform the division. The proposed divider is modeled with neural network while TLBO algorithm is used to optimize it. The proposed optimiza...
متن کاملHigh-Accurate Low-Voltage Analog CMOS Current Divider Modify by Neural Network and TLBO Algorithm
A high accurate and low-voltage analog CMOS current divider which operates with a single power supply voltage is designed in 0.18µm CMOS standard technology. The proposed divider uses a differential amplifier and transistor in triode region in order to perform the division. The proposed divider is modeled with neural network while TLBO algorithm is used to optimize it. The proposed optimiza...
متن کاملChannel thickness dependency of high-k gate dielectric based double-gate CMOS inverter
This work investigates the channel thickness dependency of high-k gate dielectric-based complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a conventional double-gate metal gate oxide semiconductor field-effect transistor (DG-MOSFET). It is espied that the use of high-k dielectric as a gate oxide in n/p DG-MOSFET based CMOS inverter results in a high noise margin as well...
متن کاملHigh-Speed Ternary Half adder based on GNRFET
Superior electronic properties of graphene make it a substitute candidate for beyond-CMOSnanoelectronics in electronic devices such as the field-effect transistors (FETs), tunnel barriers, andquantum dots. The armchair-edge graphene nanoribbons (AGNRs), which have semiconductor behavior,are used to design the digital circuits. This paper presents a new design of ternary half a...
متن کاملOptical pulse compression based on nonlinear silicon waveguides and chirped Bragg gratings
Due to the growing demand for higher bandwidth, employing optical devices instead of electronic devices in data transmission systems has attracted much attention in recent years. Optical switches, modulators and wavelength converters are a few examples of the required optical devices. CMOS compatible fabrication of these devices, leads to much more growing of this technology. Optical pulse comp...
متن کامل